Temasek Laboratories@NTU explores the frontiers in science and develops strategic technologies to enhance the defence and security of Singapore. TL@NTU forms part of the defence technology community in Singapore alongside DSO National Laboratories, Defence Science and Technology Agency (DSTA), Temasek Laboratories @ NUS and @SUTD and the local defence industry.
Key Responsibilities:
Development of III-Nitride HEMTs targeting high-frequency and high-power RF applications.
Project Planning and Execution: Plan project deliverables, set timelines, and ensure successful execution.
Design and Simulation: Design and simulate III-Nitride HEMT heterostructures.
Regrowth Process Development: Develop MBE regrowth processes (growth and fabrication) to achieve low contact resistance.
Characterization: Evaluate structural, electrical, and optical properties of grown epistructures.
GaN on Diamond Integration: Develop bonding/debonding and substrate removal processes; perform thermal modeling and measure thermal boundary resistance.
Data Analysis and Publication: Conduct in-depth analysis of experimental results and publish findings in high-impact scientific journals.
Project Management: Independently manage the project to ensure timely delivery of milestones.
Proposal and Report Writing: Prepare project proposals and technical reports for funding agencies.
Research Support: Supervise and support PhD students in their research projects.
Job Requirements
A PhD in Physics, Materials Science, or Electrical and Electronic Engineering, with at least 5 years of relevant postdoctoral research experience.
Extensive hands-on experience with MOCVD/MBE epitaxial material growth techniques.
Direct experience in semiconductor epitaxy, particularly III-Nitride material systems, is highly desirable.
Self-driven and motivated person who is a good team player.
Good writing skills for writing proposals, reports and publications in good academic journals
We regret that only shortlisted candidates will be notified.
Hiring Institution: NTU
